DS1245YP-70
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as
DDR SDRAM
K4B4G1646E-MABA
The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16I/Os x 8banks, device.
DDR4 SDRAM K4A4G165WF-BCTD
The K4A4G165WF-BCTD is a 4Gb 256Mx16 F-die DDR4 SDRAM Memory ic with package 96FBGA.
AS6C1008-55SIN
The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072
MP20073DH-LF-Z
The MP20073 integrates the DDR memory termination regulator with the output voltage(VTT) and a
CY7C199-15VCT
The CY7C199C is a high-performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports
AS4C32M16SB-7TIN
The 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally
FM24W256-GTR
The FM24W256-GTR is a high-performance ferroelectric random access memory circuit with fast 2-wire
MT41K256M16HA-125_E
DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
MT41K512M16HA-125_A
The MT41K512M16HA-125_A is a high-performance dynamic random access memory (DRAM) module with an
Electronic Component Memory MT41K128M16JT-125
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.
Electronic Component Memory M25P16-VMN6TP
The M25P16-VMN6TP is a high-performance flash memory device with a capacity of 16Mb. It features a