K4B4G1646E-MABA

The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16I/Os x 8banks, device.

The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset . All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.35V(1.28V~1.45V) or 1.5V(1.425V~1.575V) power supply and 1.35V(1.28V~1.45V) or 1.5V(1.425V~1.575V) VDDQ. Hot Tags: k4b4g1646e-maba, China k4b4g1646e-maba suppliers, manufacturers, magnetic reed switch sensor, fan less computer, industrial embedded single board computers, LM1084IS ADJ Marking LM1084 TO263 LODLinear and low dropout regulators, ruggedized mobile computer, flat panel pc