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MT41K512M16HA-125_A

MT41K512M16HA-125_A

The MT41K512M16HA-125_A is a high-performance dynamic random access memory (DRAM) module with an impressive capacity of 8 GB. It is an essential component for high-end computing systems, providing exceptional speed and reliability to support demanding applications.

Description

The MT41K512M16HA-125_A is a high-performance dynamic random access memory (DRAM) module with an impressive capacity of 8 GB. It is an essential component for high-end computing systems, providing exceptional speed and reliability to support demanding applications.

 

One of the key features of this DRAM module is the differential bidirectional data strobe, which ensures that data can be transmitted bi-directionally between the module and the processor with minimal errors or signal interference. Additionally, the differential clock inputs (CK, CK#) enable accurate synchronization between the module and processor, further improving performance and data transmission speed.

 

To further enhance performance, the MT41K512M16HA-125_A also allows for programmable posted CAS additive latency (AL). This feature enables the system to adjust the latency timing to optimize performance for specific applications, ensuring that tasks are completed faster and more efficiently.

 

Another great feature of this DRAM module is the self-refresh mode. This mode reduces power consumption by allowing the module to refresh itself without needing to be constantly refreshed by the processor. This not only reduces power consumption, but it also ensures that the module remains reliable and runs smoothly.

 

Overall, the MT41K512M16HA-125_A is a high-performance DRAM module with a range of features that ensure optimal speed, reliability, and power efficiency. It is an excellent addition to any high-end computing system, providing exceptional performance and value.

 

Packaging method Input voltage Operational temperature
FBGA 3.5V to 8V 0℃ to 90℃

 

MT41K512M16HA-125A1

MT41K512M16HA-125A2

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