
Electronic components
MT41K256M16HA-125_E
- Part number
- MT41K256M16HA-125_E
- Category
- Memory / Ddr Sdram
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Overview
DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Details
DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Features
It is an excellent memory chip - MT41K256M16HA-125_ E. It adopts Differential bidirectional data strobe technology, which can effectively reduce interference and errors during data transmission, and has good reliability and stability.In addition, the chip also adopts an 8n-bit prefetch architecture, which can simultaneously retrieve a large amount of data from memory, greatly improving the system's response speed and significantly reducing memory access latency and loading time.
In order to further improve the stability and reliability of the chip, MT41K256M16HA-125_ E is also equipped with Nominal and dynamic on die termination technology, which can automatically adapt signal impedance during memory access, effectively reducing signal reflection and electromagnetic interference, ensuring the integrity and accuracy of data transmission.
In addition, the chip can also change access timing through Programmable posted CAS additive latency technology to achieve higher performance and lower latency. At the same time, it also supports multiple modes such as self refresh and automatic refresh, which can be flexibly switched according to needs, ensuring stable operation of the system in various work scenarios.
Finally, MT41K256M16HA-125_ E also has rich multi-functional registers that can adjust memory architecture and performance as needed, reducing the risk of system errors and improving the stability and reliability of the entire system.In summary, MT41K256M16HA-125_ E is a high-performance, stable and reliable memory chip with high usage value and market competitiveness, which is very suitable for various high-performance computing, storage, and data processing applications.
Parameters
Packaging method
Input voltage
Operational temperature
FBGA
1.283V to 1.45V
0℃ to 95℃
Application
Embedded systems and electronic products
Postive Photo
Functional Block Diagram
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