Electronic Component Memory KLM8G1GETF-B041
KLM8G1GETF-B041 is a NAND-based flash memory device that offers high performance and reliability.
DDR SDRAM
Electronic Component Memory K4B4G1646E-BMMA
K4B4G1646E-BMMA is a high-performance 4Gb DDR3 SDRAM module designed by Samsung. It operates at a
Electronic Component Memory KLM4G1FETE-B041
KLM4G1FETE-B041 is a type of NAND flash memory with a high capacity and fast speed. This memory
Electronic Component Memory K4A4G165WF-BCTD
K4A4G165WF-BCTD is a high-speed and low-power dynamic random-access memory (DRAM). It is designed
Electronic Component Menory IS61WV12816DBLL-10TLI
IS64WV12816DBLL is a high-speed and low-power memory module that supports single power supply. It
Electronic Component Memory MT41J256M16HA-125_E
The MT41J256M16HA-125_E is a state-of-the-art memory component that offers high reliability and
Electronic Component Memory K4A4G165WD
K4A4G165WD
Electronic Component Memory MT41J256M16HA
The DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double
Electronic Component Memory IS42S16160G-7TLI
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All
Electronic Component Memory NT5CB256M16DP-FL
The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits.
Electronic Component Memory MT41K512M16HA-125_A
DDR3L (1.35V) SDRAM is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to a DDR3 (1.5V) SDRAM
Electronic Component Memory K4B4G1646E
The 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16I/Os x 8banks, device. This synchronous