Field Effect Transistor

AO3415

AO3415

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and

AO3407A

AO3407A

The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and

IRF540NPBF

IRF540NPBF

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

BSS138

BSS138

High density cell design for extremely low RDS(on). Rugged and Relaible.

SI2310-TP

SI2310-TP

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Related archived topics

Request a quote