
AO3415
The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

The 2N7002ET1G is a small signal MOSFET of the N-channel field effect transistor type, featuring low conductivity resistance.

The IRF4905PBF MOSFET transistor is a highly efficient electronic component with an ultra-low on-resistance. This means that it consumes very little power when in operation, making it ideal for use

DN3535N8-G is an exceptional electronics component with a high input impedance and low input capacitance.The high input impedance of DN3535N8-G means that it is capable of amplifying even weak

• Halogen-free according to IEC61249-2-21

Switching Voltage Regulators

The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due

Fifth Generation HEXFETsfromInternational Rectifierutilize advanced processing techniques to achieveThisextremely low on-resistance per siliconareabenefit combined with the fast switching speed


Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide

The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.