China nanosheet transistor Manufacturers Factory Suppliers
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IRLML0030TRPBFRead More
Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl Increased reliabilit
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Power MOSFET Power MOSFETRead More
The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.
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IRF3205STRLPBFRead More
The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology, ultra-low on-resistance, dynamic dv/dt rating, and fast switching capabilities. This electronic component
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Electronic Component Transistor IRF7389TRPBFRead More
The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this
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TransistorsRead More
The IRLB3034PBF is an excellent enhancement mode MOSFET that is optimized for logic level drive. This MOSFET is designed with improved gate, avalanche, and dynamic dV/dt ruggedness, which makes it an
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Electronic Component Transistor NCEP02T10Read More
The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due
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Electronic Component Transistor BSS214NWH6327XTSA1Read More
• N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21
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Electronic Component Transistor IRLML6401TRPBFRead More
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Electronic Component Transistor IPD90N04S4-05Read More
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested



