2SK2225-E
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary
Field Effect Transistor
IRFP4668
BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and
VIPER12A
The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on
IRFHS9351TRPBF
Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier
IRLML0030TRPBF
Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl
Field Effect Transistor 2N7002ET1G
The 2N7002ET1G is a small signal MOSFET of the N-channel field effect transistor type, featuring
RF Power LDMOS Transistors MRFE6VP5300N
The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral
Power MOSFET Power MOSFET
The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use
ISL9V3040S3ST
The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive
IRF4905PBF
The IRF4905PBF MOSFET transistor is a highly efficient electronic component with an ultra-low
IRF3205STRLPBF
The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology,
SVF4N60DTR
The SVF4N60DTR is an exceptional N-channel enhanced field-effect transistor that boasts of