Electronic Component Transistor FDP61N20

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable...

Introduction: Welcome to our product introduction of FDP61N20. We are a leading manufacturer of electronic components based in China and have been providing high-quality products to merchants around the world for many years. Our FDP61N20 product is a state-of-the-art MOSFET transistor that offers superior performance and reliable operation for a range of applications. Overview: The FDP61N20 is a power MOSFET transistor that is designed for use in high-performance switching applications. It offers a low on-state resistance of just 0.022ohm, which means that it can handle higher current loads without overheating. This makes it ideal for use in power supplies, motor control circuits, and other high-power applications where efficiency and reliability are critical. Features: One of the key features of the FDP61N20 is its low on-state resistance, which is just 0.022ohm. This makes it ideal for use in applications that require high power output, such as high-performance motor control circuits and power supplies. In addition, the FDP61N20 is designed to handle a maximum voltage of 200V, which makes it suitable for use in a wide range of applications. Another key feature of the FDP61N20 is its high switching speed, which means that it can turn on and off quickly in response to changes in the input signal. This makes it ideal for use in applications that require fast switching times, such as welding machines, UPS systems, and inverters. Finally, the FDP61N20 also features a low gate charge, which means that it can be controlled with a smaller input signal. This reduces the amount of power required to drive the transistor, which helps to improve overall efficiency and reduce heat dissipation. Benefits: There are several benefits to using FDP61N20 in your application. First, its low on-state resistance means that it can handle higher current loads without overheating, which reduces the risk of component failure and improves overall reliability. Second, its high switching speed ensures that it can respond quickly to changes in the input signal, which makes it ideal for use in applications that require fast switching times. Third, its low gate charge means that it can be driven with a smaller input signal, which reduces the amount of power required and improves overall efficiency. Fourth, its maximum voltage rating of 200V makes it suitable for use in a wide range of applications. Finally, its compact size and lightweight design make it easy to integrate into your existing system, which reduces the overall cost and complexity of your project. Applications: The FDP61N20 is suitable for use in a wide range of applications, including: 1) Motor control circuits 2) Power supplies 3) Inverters 4) Welding machines 5) UPS systems 6) LED lighting 7) Audio amplifiers 8) High-frequency switching circuits Conclusion: In conclusion, the FDP61N20 is a high-performance MOSFET transistor that offers superior performance, reliability, and efficiency. Its low on-state resistance, high switching speed, and low gate charge make it ideal for use in a wide range of applications, including motor control circuits, power supplies, and inverters. If you are interested in learning more about the FDP61N20 or any of our other products, please contact us today. Thank you for your interest in our products, we look forward to working with you! Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 34 mΩ (Typ.) @ VGS = 10 V, ID = 30.5 A • Low Gate Charge (Typ. 58 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Why choose us? We offer both standard and customized packaging options for our products. Our company has a technology development center, and in a number of scientific research institutions, colleges and universities to establish a long-term cooperative relationship. Our factory has a large production capacity, ensuring fast order fulfillment. We provide our customers with a more convenient, comfortable and efficient consumer experience, and establish a smooth communication system. We provide affordable prices for our customers. In recent years, with the adjustment of the country’s economic structure and the “One Belt One Road” initiative, FDP61N20 has responded positively and vigorously implemented an international strategy, making full use of two markets and resources at home and abroad, and optimizing global resource allocation and industrial layout. Our company is a supplier and manufacturer of FET products. Our company strictly abides by the spirit of contract, respects contracts and keeps promises, and has established a good reputation and credibility in the domestic and international markets, and has established long-term and stable cooperative relationships. We have a knowledgeable and experienced team to provide technical support. Since its inception, we have always devoted all our strength to the FDP61N20 field. We have introduced advanced technology from home and abroad, and constantly updated our concepts, forming a unique market competitive advantage. Our products are not only sold well domestically but also exported to many countries. Hot Tags: Electronic Component Transistor FDP61N20, China Electronic Component Transistor FDP61N20 suppliers, manufacturers, Transistor, Triode Transistor, AO3407A Marking X7RL SOT23 Field Effect Transistor, fallout transistor, SI2310 TP Marking S10 SOT23 Field Effect Transistor, bipolar junction transistor