
BSS138
High density cell design for extremely low RDS(on). Rugged and Relaible.

High density cell design for extremely low RDS(on). Rugged and Relaible.

BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free

The 2N7002ET1G is a small signal MOSFET of the N-channel field effect transistor type, featuring low conductivity resistance.

The SVF4N60DTR is an exceptional N-channel enhanced field-effect transistor that boasts of top-notch features. This transistor is designed with low gate charge, ensuring that its performance is

Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common

The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this

The IRLB3034PBF is an excellent enhancement mode MOSFET that is optimized for logic level drive. This MOSFET is designed with improved gate, avalanche, and dynamic dV/dt ruggedness, which makes it an

The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due


Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)