China epitaxial transistor Manufacturers Factory Suppliers
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Power MOSFET Power MOSFETRead More
The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.
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ISL9V3040S3STRead More
The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.
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Electronic Component Transistor AFT05MP075NR1Read More
Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common
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Electronic Component Transistor NCEP02T10Read More
The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due
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Electronic Component Transistor IXTQ82N25PRead More
Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
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Electronic Component Transistor IRLML6401TRPBFRead More
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Electronic Component Transistor AOD407Read More
General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this
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IRF540NPBFRead More
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast



