
BSS138
High density cell design for extremely low RDS(on). Rugged and Relaible.

High density cell design for extremely low RDS(on). Rugged and Relaible.

• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary breakdown • Suitable for switching regulator, DC-DC converter

BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free

The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on the same silicon chip.

Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl Increased reliabilit

The 2N7002ET1G is a small signal MOSFET of the N-channel field effect transistor type, featuring low conductivity resistance.

The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology, ultra-low on-resistance, dynamic dv/dt rating, and fast switching capabilities. This electronic component

The 2SJ113 is an amazing transistor that is known for its low on-resistance, high speed switching, high cutoff frequency, and no secondary breakdown. It is a highly reliable transistor that is widely

The IRS20955 is a high voltage, high speed MOSFET driver with a floating PWM input designed for Class D audio amplifier applications.

The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast