China bipolar field effect transistor Manufacturers Factory Suppliers

Our company has strong technical force, our production process strictly follows the international quality system norms, and our S9013 Marking J3 SOT23 Triode Transistor, transistors in electronics, MMBT3904 Marking 1AM SOT23 Triode Transistor is processed with advanced equipment.The research and development of a batch of high-tech bipolar field effect transistor has cultivated our company's new economic growth point. We believe that human resource construction and talent training play a fundamental role in the development of enterprises. In order to participate in international competition, our company is actively going out and expanding its business in the world. We advocate the business philosophy of "innovation, integrity and win-win, attention to detail, achievement of others". Our company has established itself with sincerity and trust. Since its establishment, our company has determined that credibility is the foundation for the long-term development of the enterprise. The company's good supporting facilities and development environment have laid a good foundation for high-quality products. We promote organizational change in a timely manner, so that the enterprise is in an effective management state, activation state and health state.
S9013

S9013

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

ISL9V3040S3ST

ISL9V3040S3ST

The ISL9V3040S3ST is EcoSPARKŠ 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.

Electronic Component Transistor BUK9608-55A

Electronic Component Transistor BUK9608-55A

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for

Electronic Component Transistor MIC4427YM

Electronic Component Transistor MIC4427YM

The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS

Electronic Component Transistor FDP61N20

Electronic Component Transistor FDP61N20

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide

BSS138

BSS138

High density cell design for extremely low RDS(on). Rugged and Relaible.

SI2310-TP

SI2310-TP

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MMBT2222A 1P

MMBT2222A 1P

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

MMBT3904

MMBT3904

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

LMBT3904TT1G

LMBT3904TT1G

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LMBT3946DW1T1G

LMBT3946DW1T1G

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

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