S9013
High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).
China S9013 Marking J3 SOT23 Triode Transistor Manufacturers Factory Suppliers
Continuous research and development of new enhancement mode field effect transistor, junction transistor, bipolar field effect transistor improve product quality, provide perfect after-sales service is the company's business philosophy.We operate in good faith, abide by the contract, and provide customers with quality S9013 Marking J3 SOT23 Triode Transistor and services. We take 'innovation, fashion, vitality' as the brand connotation, 'Initial & Inspire' as the research and development policy. Our company has international sales experience and the ability to create good results, you can rest assured bold cooperation with us. Our company must constantly pursue technological innovation and technological progress in order to maintain cost advantage and product advantage. Our company attaches great importance to the development, accumulation and maintenance of patented technologies. The company has always provided good products to Chinese customers, established a good reputation and accumulated rich experience. Our company adheres to the quality policy of 'product and peer competition, quality in line with international standards' and strive to create our brand.
Electronic Component Transistor AFT05MP075NR1
Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common
Electronic Component Transistor IRF7389TRPBF
The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this
Electronic Component Transistor NCEP02T10
The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due
Electronic Component Transistor IXTQ82N25P
Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Electronic Component Transistor BD243C
The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package.They are inteded for use in medium power linear and switching applications.The complementary
Electronic Component Transistor IRF9540NPBF
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed
Electronic Component Transistor IPD90N04S4-05
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
MMBT2222A 1P
Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.
MMBT3904
NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS
LMBT3904TT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3946DW1T1G
S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.