LMBT3946DW1T1G

Electronic components

LMBT3946DW1T1G

Part number
LMBT3946DW1T1G
Category
Transistor / Triode Transistor

Share your quantity, required date and documentation requirements. Availability and supply conditions are confirmed during quotation.

Request this part ↗

Send a complete BOM →

Documents & technical information

A verified datasheet is not currently available on this page. Include the exact part number and document requirements in your inquiry.

Ask about documentation →

Product information

Overview

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Details

Possible product introduction: Introducing the LMBT3946DW1T1G, a high-performance RF transistor designed for wireless communication applications. This transistor features a highly-efficient and reliable N-channel MOSFET structure, optimized for broadband amplification and switching with low distortion and parasitic effects. It operates over a wide frequency range (from DC to 6 GHz) and supports various modulation schemes (including CDMA, WCDMA, GSM, LTE, WiMAX, and WLAN) with high linearity and output power. The LMBT3946DW1T1G is ideal for power amplifiers, driver stages, and other RF circuits that require high performance and versatility. It can deliver up to 4 W of saturated output power (at 3.5 GHz) with a gain of 22 dB and an efficiency of 55%, surpassing many similar products in the market. It also has a high power-added efficiency (PAE) of up to 68%, which translates into lower power consumption, less heat dissipation, and longer battery life for mobile devices. The LMBT3946DW1T1G maintains its performance and reliability under various operating conditions, thanks to its robust package and layout design. It uses a common emitter configuration with a grounded source connection, which simplifies the matching and biasing of the circuit. It also has a built-in ESD protection mechanism that prevents damage from electrostatic discharges, a common cause of failure in RF components. The LMBT3946DW1T1G is compatible with various fabrication technologies and platforms, including GaAs, SiGe, and SOI. It has a small form factor (with dimensions of 1.5 mm x 1.5 mm x 0.5 mm) and a low profile (with a height of only 0.5 mm), which reduces the footprint and volume of the circuit. It is also RoHS compliant and lead-free, meeting the environmental and regulatory standards of many countries. The LMBT3946DW1T1G has been extensively tested and qualified to ensure its quality and performance. It has passed various reliability tests, such as JEDEC JESD22-A101 (temperature cycling), JESD22-A104 (biased HAST), and JESD22-A108 (temperature and humidity). It also complies with the requirements of AEC-Q101, a standard for automotive electronics. By choosing the LMBT3946DW1T1G, merchants can benefit from a high-quality RF transistor that offers excellent performance, versatility, and reliability. They can use it in various wireless communication systems, such as smartphones, tablets, routers, base stations, and IoT devices. They can also enjoy competitive prices and flexible delivery options, thanks to our efficient and scalable supply chain management. We are committed to providing our customers with the best value and support, and we welcome inquiries, samples, and orders from all over the world. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Low VCE(sat), ≤ 0.4 V ● Simplifies circuit design ● Reduces board space ● Reduces component count ● hFE, 100–300 Why choose us? Our Triode Transistors are designed to offer exceptional performance in even the most demanding conditions. We guide the market with quality, impress customers with professionalism, and continue to consolidate and expand the domestic market. Our focus on quality is reflected in our Triode Transistor products that stand out in the industry. We are a company that keeps pace with the times and grows rapidly. The company's goal is to continuously pursue the improvement and development of the brand, provide reliable products and services to the society, diversify development on the basis of steady development, and strive to become a leader in the LMBT3946DW1T1G industry. We strive to keep up with the latest advancements in the industry to provide our customers with cutting-edge Triode Transistors. Our company will always adhere to the enterprise spirit of 'science, rigor, innovation, and dedication', and stick to the business philosophy of 'science first, quality first, service first'. Our Triode Transistors are rigorously tested for safety and durability, ensuring the highest quality standards are met. Due to the continuous innovation and support of our technical team, our products are continuously upgraded to meet the needs of customers. We offer a comprehensive warranty program to ensure that our customers are satisfied with their purchase. It is the fundamental purpose of the enterprise to dedicate more and better products to the society and benefit the employees, and it is also the fundamental requirement of the scientific concept of development. Hot Tags: lmbt3946dw1t1g, China lmbt3946dw1t1g suppliers, manufacturers, bipolar field effect transistor, Field Effect Transistor, MMBT2222A Marking 1P SOT23 Triode Transistor, enhancement mode field effect transistor, LMBT3946DW1T1G Marking 469 SOT363 Triode Transistor, programmable unijunction transistor

Images & related information

Prepare your inquiry

Include the full part number, quantity, required date and any packaging or documentation requirements. For several line items, attach your BOM.

BOM preparation guide →
Request a quote ↗

Browse this category →