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China MMBT3904 Marking 1AM SOT23 Triode Transistor Manufacturers Factory Suppliers

We will improve our product design and production capacity in order to create benchmark LMBT3946DW1T1G Marking 469 SOT363 Triode Transistor, MMBT2222A Marking 1P SOT23 Triode Transistor, MMBT3904 Marking 1AM SOT23 Triode Transistor and achieve business leading the company's sustainable development.Committed to becoming one of the most competitive suppliers of MMBT3904 Marking 1AM SOT23 Triode Transistor in the world is our unremitting pursuit since the establishment of our company! We actively promote the industrialization and transformation of scientific research technology, so that the innovation ability of enterprises can be continuously improved. Our business philosophy is to be "strivers" oriented, innovative and efficient in execution! Customer satisfaction is our first goal. We will provide you with fast service and high-quality products at an excellent price. Welcome new and old customers to negotiate and order. We insist on "humanized" management, and try our best to provide a broad stage for all kinds of talents to show their talents. In the selection of talents, we advocate the use of talents in a free competition in a fair, open and just atmosphere.
  • MMBT3904

    NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

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  • IRLML0030TRPBF

    Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl Increased reliabilit

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  • IRF4905PBF

    The IRF4905PBF MOSFET transistor is a highly efficient electronic component with an ultra-low on-resistance. This means that it consumes very little power when in operation, making it ideal for use

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  • Electronic Component Transistor IRF7389TRPBF

    The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this

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  • Electronic Component Transistor SI1401EDH-T1-GE3

    FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

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  • Electronic Component Transistor AFT09MS031GNR1

    Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common

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  • Electronic Component Transistor IRF1018ESTRLPBF

    Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche SOA Enhanced body diode dV/dt and dI/dtCapability

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  • Electronic Component Transistor IPD90N04S4-05

    Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

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  • MMBT2222A 1P

    Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

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  • S9013

    High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

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  • LMBT3904TT1G

    S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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  • LMBT3946DW1T1G

    S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

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