MMBT3904
NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS
China MMBT3904 Marking 1AM SOT23 Triode Transistor Manufacturers Factory Suppliers
We will improve our product design and production capacity in order to create benchmark LMBT3946DW1T1G Marking 469 SOT363 Triode Transistor, MMBT2222A Marking 1P SOT23 Triode Transistor, MMBT3904 Marking 1AM SOT23 Triode Transistor and achieve business leading the company's sustainable development.Committed to becoming one of the most competitive suppliers of MMBT3904 Marking 1AM SOT23 Triode Transistor in the world is our unremitting pursuit since the establishment of our company! We actively promote the industrialization and transformation of scientific research technology, so that the innovation ability of enterprises can be continuously improved. Our business philosophy is to be "strivers" oriented, innovative and efficient in execution! Customer satisfaction is our first goal. We will provide you with fast service and high-quality products at an excellent price. Welcome new and old customers to negotiate and order. We insist on "humanized" management, and try our best to provide a broad stage for all kinds of talents to show their talents. In the selection of talents, we advocate the use of talents in a free competition in a fair, open and just atmosphere.
RF Power LDMOS Transistors MRFE6VP5300N
The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.
BTA12-600BRG
The BTA12-600BRG is a high-quality thyristor that is well-suited for general-purpose AC switching applications. With reliable and efficient performance, this device can effectively control the flow
Electronic Component Transistor BSS138WH6327XTSA1
• Halogen-free according to IEC61249-2-21
Electronic Component Transistor MJE182G
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
Electronic Component Transistor FCD620N60ZF
SuperFET II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate
Electronic Component Transistor FDP61N20
Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide
Electronic Component Transistor IPD90N04S4-05
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
MMBT2222A 1P
Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.
S9013
High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).
LMBT3904TT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3946DW1T1G
S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.