MMBT3904

NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.2A. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives.

The MMBT3904 is a versatile and highly reliable NPN bipolar junction transistor (BJT) that is widely used in circuits that require high frequency amplification, switching, and low noise. This product is manufactured in accordance with strict quality standards and comes in a compact SOT-23 package, making it a popular choice for various applications in the electronics industry. One of the main advantages of the MMBT3904 is its high gain and low noise characteristics. This transistor has a typical gain of 100-300, making it suitable for use in low-power audio amplifiers, signal amplifiers, and oscillator circuits. The low noise performance of this transistor also makes it ideal for use in high-performance RF circuits, such as those used in wireless communication systems. Furthermore, the MMBT3904 has a fast switching speed, making it suitable for use in digital circuits that require fast switching times. This transistor is also capable of handling up to 200 mA of current and up to 40 V of voltage, making it a versatile choice for various applications. In addition to its performance characteristics, the MMBT3904 is also highly reliable and durable. This transistor is manufactured using high-quality materials and advanced manufacturing processes to ensure consistent performance and long-term reliability. It also has a wide operating temperature range (-55°C to 150°C), making it suitable for use in harsh environments. The MMBT3904 is a popular choice among electronic designers and manufacturers due to its versatility, reliability, and performance characteristics. It is commonly used in applications such as audio amplifiers, signal amplifiers, oscillator circuits, and digital circuits. Additionally, this transistor is widely available and cost-effective, making it an ideal choice for small and large scale production runs. If you are a merchant looking for a high-quality bipolar junction transistor that offers excellent performance, reliability, and versatility, the MMBT3904 is an excellent choice. With its compact SOT-23 package and high gain, low noise, and fast switching speed characteristics, this transistor is well suited to a wide range of applications in the electronics industry. Whether you are designing a high-performance RF circuit or a low-power audio amplifier, the MMBT3904 is the perfect choice for your needs. FEATURES ●NPN epitaxial silicon, planar design. ●Collector-emitter voltage VCE=40V. ●Collector current IC=0.2A. ●Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz. ●In compliance with ER RoHS 2002/95/EC directives. Why choose us? We take pride in our premium Triode Transistors and strive for excellence in customer satisfaction. We are committed to let more customers enjoy the quality MMBT3904 and attentive service, and experience our superior corporate culture. We strive to exceed the expectations of our customers with our top-quality Triode Transistors. We insist on innovation and development as the soul of corporate culture construction. Our factory is dedicated to producing Triode Transistors that are reliable, efficient, and long-lasting. Our company is based on honesty and quality as the development way to provide stable and reliable MMBT3904 for customers. We are committed to providing our customers with versatile Triode Transistors that can be used in a wide range of applications. We will always adhere to the concept of "science, fairness, openness and sharing", integrate resources and complement each other's strengths. We offer a range of packaging options for our Triode Transistors to ensure safe and secure delivery to our customers. Our innovation capability is at its peak, and we have a strong manufacturing base. Hot Tags: mmbt3904, China mmbt3904 suppliers, manufacturers, enhancement mode field effect transistor, optical transistor, LMBT3904TT1G Marking MA9 SOT523 Triode Transistor, LMBT3946DW1T1G Marking 469 SOT363 Triode Transistor, transistors in electronics, silicon transistor