
S9013
High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

The IRF4905PBF MOSFET transistor is a highly efficient electronic component with an ultra-low on-resistance. This means that it consumes very little power when in operation, making it ideal for use

The ADS7843 is a 12-bit sampling analog-to-digitalconverter (ADC) with a synchronous serial interfaceand low on-resistance switches for driving touchscreens.

The IRS20955 is a high voltage, high speed MOSFET driver with a floating PWM input designed for Class D audio amplifier applications.

The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due

Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast

Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications.

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.