
MMBT2222A 1P
Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.

The MC100EPT21 is a Differential LVPECL/LVDS/CML toLVTTL/LVCMOS translator. Because LVPECL (Positive ECL),LVDS, and positive CML input levels and LVTTL/LVCMOS outputlevels are used, only +3.3 V and

Strobe flasher

The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS

Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor

High blocking voltage capability. Less sensitive gate for improved noise immunity. Surface-mountable package. Triggering in all four quadrants.

Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.