China enhancement mode field effect transistor Manufacturers Factory Suppliers
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MMBT2222A 1PRead More
Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.
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Power MOSFET Power MOSFETRead More
The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.
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Electronic Component Transistor AFT05MP075NR1Read More
Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common
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Electronic Component Transistor IRFP064NPBFRead More
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed
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IRF540NPBFRead More
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast
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LMBT3904TT1GRead More
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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LMBT3946DW1T1GRead More
S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.



