China Field Effect Transistor Manufacturers Factory Suppliers

Our constant goal is to meet the needs of customers and become the most trusted enhancement mode field effect transistor, silicon transistor, optical transistor supplier in the hearts of customers.Our company integrates product design, manufacturing, marketing and technical support, professionally providing Field Effect Transistor and related integrated supporting services. Adhering to the concept of openness, tolerance, and work together, our employees are diverse and diligent, and each brings different skills, experience and unique perspectives. We adhere to the concept of innovation, system innovation, to create a fair, just and open atmosphere. We give our employees more rights and benefits in accordance with our development strategy so that they can develop and benefit together with the company. Our company continues to integrate innovation, improve and upgrade in technology, quality and service! We have always carried out extensive and in-depth exchanges and cooperation with the industry with an open and integrated mentality! Our company has always adhered to the 'customer first, quality first' principle, Since its establishment, it has established a strict quality management system. Honest and productive cooperation between two trading partners can lead to development. In the spirit of infinite persistence, we are using experience and industry changes every day to improve our design, manufacturing and production capabilities.
S9013

S9013

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

VIPER12A

VIPER12A

The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on the same silicon chip.

2SJ113

2SJ113

The 2SJ113 is an amazing transistor that is known for its low on-resistance, high speed switching, high cutoff frequency, and no secondary breakdown. It is a highly reliable transistor that is widely

Electronic Component Transistor AFT05MP075NR1

Electronic Component Transistor AFT05MP075NR1

Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common

Electronic Component Transistor IRFU9024NPBF

Electronic Component Transistor IRFU9024NPBF

Fifth Generation HEXFETsfromInternational Rectifierutilize advanced processing techniques to achieveThisextremely low on-resistance per siliconareabenefit combined with the fast switching speed

Electronic Component Transistor IRF9540NPBF

Electronic Component Transistor IRF9540NPBF

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed

BT136S-600,118

BT136S-600,118

Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications.

MMBT2222A 1P

MMBT2222A 1P

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

MMBT3904

MMBT3904

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

LMBT3904TT1G

LMBT3904TT1G

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LMBT3946DW1T1G

LMBT3946DW1T1G

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

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