
LMBT3904TT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary breakdown • Suitable for switching regulator, DC-DC converter

The MC100EPT21 is a Differential LVPECL/LVDS/CML toLVTTL/LVCMOS translator. Because LVPECL (Positive ECL),LVDS, and positive CML input levels and LVTTL/LVCMOS outputlevels are used, only +3.3 V and

Strobe flasher

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.

The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package.They are inteded for use in medium power linear and switching applications.The complementary

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications.

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.