
MMBT2222A 1P
Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary breakdown • Suitable for switching regulator, DC-DC converter

BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free

The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology, ultra-low on-resistance, dynamic dv/dt rating, and fast switching capabilities. This electronic component

The 2SJ113 is an amazing transistor that is known for its low on-resistance, high speed switching, high cutoff frequency, and no secondary breakdown. It is a highly reliable transistor that is widely

SuperFET II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate

Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.