China silicon transistor Manufacturers Factory Suppliers

We have a constantly innovative and perfect product system, cutting-edge technology, excellent quality, and we lead the enhancement mode field effect transistor, programmable unijunction transistor, metal oxide semiconductor transistors industry through our tireless efforts.We actively develop strategic emerging industries, actively research and develop high-end silicon transistor, and continuously promote the optimization and upgrading of product structure. We insist on the high unity of economic and social responsibilities to build a harmonious society. We think that the more important thing of corporate culture is that it also has a long-term significance for economic development. Our company is committed to building excellent brand enterprises, not only more effectively to maintain our own value, but also more rapid development. Our company has established long-term cooperation relationship with many enterprises with the tenet of 'quality casting brand, good faith service for customers', and in line with the principle of 'customer first and good faith'. Through a standardized project management system and standardized operating procedures, we continuously improve our technical strength and service level, and provide customers with the most professional and suitable products and solutions.
MMBT2222A 1P

MMBT2222A 1P

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package.

2SK2225-E

2SK2225-E

• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary breakdown • Suitable for switching regulator, DC-DC converter

IRFP4668

IRFP4668

BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free

IRF3205STRLPBF

IRF3205STRLPBF

The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology, ultra-low on-resistance, dynamic dv/dt rating, and fast switching capabilities. This electronic component

2SJ113

2SJ113

The 2SJ113 is an amazing transistor that is known for its low on-resistance, high speed switching, high cutoff frequency, and no secondary breakdown. It is a highly reliable transistor that is widely

Electronic Component Transistor FCD620N60ZF

Electronic Component Transistor FCD620N60ZF

SuperFET II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate

Electronic Component Transistor IPD90N04S4-05

Electronic Component Transistor IPD90N04S4-05

Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

AO3415

AO3415

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

MMBT3904

MMBT3904

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current IC=0.2A.. Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.. In compliance with ER RoHS

S9013

S9013

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(Pc=300mW).

LMBT3904TT1G

LMBT3904TT1G

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LMBT3946DW1T1G

LMBT3946DW1T1G

S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

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