
IRF540NPBF
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

High density cell design for extremely low RDS(on). Rugged and Relaible.

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Applications include the ON/OFF function in applications such as static relays, heating regulation,

Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended

High blocking voltage capability. Less sensitive gate for improved noise immunity.

Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high

The Z01 series is suitable for general purpose AC switching applications. These devices are

Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface

NPN epitaxial silicon, planar design.. Collector-emitter voltage VCE=40V.. Collector current

High Collector Current.(Ic=500mA). Complementary To S9012. Excellent HFE Linearity. Power

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change