Electronic Component Transistor FDP61N20
Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide
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After years of efforts, with superior quality of products as well as excellent service, now, we have became the leading supplier of semiconductor transistor, bipolar junction transistor, heatsink transistor around the world.It is this quest that makes our product performance far surpass industry standards, making us a leading manufacturer of semiconductor transistor in the global marketplace. The company continues to improve itself, continuously improve the industrial layout, and provide more diversified services. We are committed to continuously meet the different needs of our customers by launching meaningful innovations in a timely manner. Therefore, our company not only gathers a large number of professional elites to join, but also attaches great importance to professional skills and quality education of employees. We know that we should always be truthful and sincere, and ensure that our actions and decisions will stand the test of time. In the actual production process, our company vigorously improved the production process, improved product quality, improved product quality, and improved the utilization rate of raw materials.
RF Power LDMOS Transistors MRFE6VP5300N
The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.
Power MOSFET Power MOSFET
The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.
Electronic Component Transistor BUK9608-55A
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for
Electronic Component Transistor SI2301CDS-T1-GE3
FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
Electronic Component Transistor NCEP02T10
The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due
Electronic Component Transistor IXTQ82N25P
Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Electronic Component Transistor IRF1018ESTRLPBF
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche SOA Enhanced body diode dV/dt and dI/dtCapability
Electronic Component Transistor IPD90N04S4-05
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
AO3407A
The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
BSS138
High density cell design for extremely low RDS(on). Rugged and Relaible.