China heatsink transistor Manufacturers Factory Suppliers
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IRFHS9351TRPBFRead More
Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability
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ISL9V3040S3STRead More
The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.
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Electronic Component Transistor BUK9608-55ARead More
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for
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Electronic Component Transistor DN3535N8-GRead More
DN3535N8-G is an exceptional electronics component with a high input impedance and low input capacitance.The high input impedance of DN3535N8-G means that it is capable of amplifying even weak
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Electronic Component Transistor SI1401EDH-T1-GE3Read More
FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
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Electronic Component Transistor BSS138WH6327XTSA1Read More
• Halogen-free according to IEC61249-2-21
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Electronic Component Transistor AUIRLS3034-7PRead More
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of
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Electronic Component Transistor BSS214NWH6327XTSA1Read More
• N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21
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Electronic Component Transistor AOD407Read More
General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this



