IRF540NPBF
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast
China opto transistor Manufacturers Factory Suppliers
We know that technological leadership is the cornerstone of our survival and development, which is why we strive to improve our development abilities of Triode Transistor, epitaxial transistor, SI2310 TP Marking S10 SOT23 Field Effect Transistor .We create value for the public with excellent products and services, and contribute to the development of the opto transistor industry and social progress. In the new era, the company will continue to adhere firmly to the core idea of innovation and development. We regard talents as the most valuable asset of the company and the root of its core competitiveness. If you are interested in our company's products and services, please leave a message online or call for consultation. Reliable, stable, and high-quality supply channels provide a strong backing for the company's operations. Our company insists on changing work style, improving work methods and improving work efficiency.
RF Power LDMOS Transistors MRFE6VP5300N
The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.
Electronic Component Transistor BUK9608-55A
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for
Transistors
The IRLB3034PBF is an excellent enhancement mode MOSFET that is optimized for logic level drive. This MOSFET is designed with improved gate, avalanche, and dynamic dV/dt ruggedness, which makes it an
Electronic Component Transistor IT6801FNBX
iT6801 is a half-bridge driver with programmable oscillator within a SOP-8L package to drive both lower MOSFET and floating upper MOSFET.
Electronic Component Transistor BSS138WH6327XTSA1
• Halogen-free according to IEC61249-2-21
Electronic Component Transistor AUIRLS3034-7P
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of
Electronic Component Transistor K100E10N1
Switching Voltage Regulators
Electronic Component Transistor NCEP02T10
The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due
Electronic Component Transistor FCD620N60ZF
SuperFET II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate
SI2310-TP
Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)