
SI2310-TP
Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.

The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.

The IRF3205STRLPBF is a powerful MOSFET transistor that features advanced process technology, ultra-low on-resistance, dynamic dv/dt rating, and fast switching capabilities. This electronic component

The SVF4N60DTR is an exceptional N-channel enhanced field-effect transistor that boasts of top-notch features. This transistor is designed with low gate charge, ensuring that its performance is

• Halogen-free according to IEC61249-2-21

Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of

Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance

Fifth Generation HEXFETsfromInternational Rectifierutilize advanced processing techniques to achieveThisextremely low on-resistance per siliconareabenefit combined with the fast switching speed


Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche SOA Enhanced body diode dV/dt and dI/dtCapability

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed