
SI2310-TP
Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl Increased reliabilit

The MRFE6VP5300N is a wideband RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFET.

The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.

The ADS7843 is a 12-bit sampling analog-to-digitalconverter (ADC) with a synchronous serial interfaceand low on-resistance switches for driving touchscreens.

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC61249-2-21

SuperFET II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed

Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast