Electronic Component Transistor AOD407
General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this
China high voltage transistor Manufacturers Factory Suppliers
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2SK2225-E
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary breakdown • Suitable for switching regulator, DC-DC converter
IRFP4668
BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free
IRFHS9351TRPBF
Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability
IRLML0030TRPBF
Lower switching losse Multi-vendor compatibilit Easier manufacturin Environmentally friendl Increased reliabilit
Field Effect Transistor 2N7002ET1G
The 2N7002ET1G is a small signal MOSFET of the N-channel field effect transistor type, featuring low conductivity resistance.
Electronic Component Transistor AFT05MP075NR1
Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common
Electronic Component Transistor SI1401EDH-T1-GE3
FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
Electronic Component Transistor IT6801FNBX
iT6801 is a half-bridge driver with programmable oscillator within a SOP-8L package to drive both lower MOSFET and floating upper MOSFET.
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The IRS20955 is a high voltage, high speed MOSFET driver with a floating PWM input designed for Class D audio amplifier applications.
Electronic Component Transistor AUIRLS3034-7P
Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of
Electronic Component Transistor AFT09MS031GNR1
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common