AT28C010E-12DM/883
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory.
Memory
AS6C1008-55SIN
The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072
MP20073DH-LF-Z
The MP20073 integrates the DDR memory termination regulator with the output voltage(VTT) and a
CY7C199-15VCT
The CY7C199C is a high-performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports
AT28C16-15JC
The AT28C16 is a low-power, high-performance Electrically Erasable and Program mable Read Only
AS4C32M16SB-7TIN
The 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally
FM24W256-GTR
The FM24W256-GTR is a high-performance ferroelectric random access memory circuit with fast 2-wire
MT41K256M16HA-125_E
DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
KLMAG2GEND-B032
KLMAG2GEND-B032 is a component of the NAND Flash memory family, which is widely used in various
MT41K512M16HA-125_A
The MT41K512M16HA-125_A is a high-performance dynamic random access memory (DRAM) module with an
Electronic Component Memory MT41K128M16JT-125
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.
Electronic Component Memory H26M52208FPRN
H26M52208FPRN is a type of high-density memory chip that offers exceptional performance and storage