
AO3407A
The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

BenefitsImproved Gate, Avalanche and Dynamic dV/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dV/dt and dI/dt Capability Lead-Free

The STR2P3LLH6 is a P-Channel Power MOSFET Field Effect Transistor.This device is suitable for use as a load switch or in PWM applications.

The IRF4905PBF MOSFET transistor is a highly efficient electronic component with an ultra-low on-resistance. This means that it consumes very little power when in operation, making it ideal for use

The 2SJ113 is an amazing transistor that is known for its low on-resistance, high speed switching, high cutoff frequency, and no secondary breakdown. It is a highly reliable transistor that is widely

Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common

The IRLB3034PBF is an excellent enhancement mode MOSFET that is optimized for logic level drive. This MOSFET is designed with improved gate, avalanche, and dynamic dV/dt ruggedness, which makes it an

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

• N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed

The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast