
Electronic Component Transistor IPD90N04S4-05
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested

The VIPer12A combines a dedicated current mode PWM controller with a high voltage Power MOSFET on the same silicon chip.

The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.

The SVF4N60DTR is an exceptional N-channel enhanced field-effect transistor that boasts of top-notch features. This transistor is designed with low gate charge, ensuring that its performance is

Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common

The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this

• Halogen-free according to IEC61249-2-21

Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common

• N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide

The AO3415 uses advanced trench technology to provide excellent RDS(ON) ,low gate charge and opeartion with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.

The AO3407A is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.