
IRF540NPBF
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast

Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability

The ISL9V3040S3ST is EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT and it also is an impressive MOSFET that features an optimized Logic Level Gate Drive for improved performance.

Designed for mobile two--way radio applications with frequencies from136 to 520 MHz. The high gain, ruggedness and broadband performance ofthese devices make them ideal for large--signal, common

The IRF7389TRPBF is a cutting-edge, fourth generation Vtechnology ultra low on-resistance complimentary half bridge. With advanced features that provide superior performance and efficiency, this

DN3535N8-G is an exceptional electronics component with a high input impedance and low input capacitance.The high input impedance of DN3535N8-G means that it is capable of amplifying even weak

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Performance 1500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common

• N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)