
MMBD914
Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

The 2SC3607 is an excellent quality NPN epitaxial planar transistor that is perfect for use in low noise amplifier applications for the VHF to UHF frequency bands.

The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V.

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

RB021VAM90

Fast Switching Speed. Surface Mount Package Ideally Suited for Automatic Insertion. For General Purpose Switching Applications. High Conductance.

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

Low Leakage. High Conductance.

General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications.

In MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon

Guardring for overvoltage protection. Low power loss . Extremely fast switching. High forward surge capability . High frequency operation . Solder dip 260 °C max. 10 s, per JESD 22-B106.