
LL4148-GS08
Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

The VS-403CNQ100PBF is a 50A to 400A input circuit original Schottky diode.

The 2SC3607 is an excellent quality NPN epitaxial planar transistor that is perfect for use in low noise amplifier applications for the VHF to UHF frequency bands.

IDW75E60 is a high-quality semiconductor device equipped with advanced 600V EmCon technology to ensure smooth and efficient performance. It features fast recovery to enhance reliability and prevent

The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V.

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping.Extremely low forward voltage reduces conduction loss. Miniature surface

Fast Switching Speed. Surface Mount Package Ideally Suited for Automatic Insertion. For General Purpose Switching Applications. High Conductance.

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

Low Leakage. High Conductance.

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 . For surface mounted applications . Metal silicon junction,majority carrier conduction . Low power loss,high