China Switch Diode Manufacturers Factory Suppliers

We have a professional R&D system with advanced production and quality testing equipment to produce perfect quint diode, MMBD914 Marking 5D SOT23 Switch diode, esd protection diode .We have strong strength and rich experience in the Switch Diode industry. We adhere to the relevant diversification strategy with the enhancement of the competitiveness of our main business as the core, and accelerate the pace of corporate development. Our company is committed to continuous innovation and development of new products, new technologies and new processes. We also regularly participate in industry exhibitions to better understand and adapt to market changes. We continue to strengthen the system construction and consolidate the basic management work, which effectively guarantee the sustainable and healthy development of the company. We are people-oriented, ensuring healthy development, honest and law-abiding, and continuously improving performance. The company will give full play to its advantageous advantages, fully implement the brand strategy, and always insist on innovation and development. Our company has been committed to the innovation and practice of green product design for many years.
BAS28

BAS28

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

NSR0320MW2T1G

NSR0320MW2T1G

These Schottky barrier diodes are designed for high current,handling capability, and low forward voltage performance

Electronic Component Diodes NSRLL30XV2T1G

Electronic Component Diodes NSRLL30XV2T1G

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping.Extremely low forward voltage reduces conduction loss. Miniature surface

1N4148W

1N4148W

​Fast Switching Speed. Surface Mount Package Ideally Suited for Automatic Insertion. For General Purpose Switching Applications. High Conductance.

LL4148-GS08

LL4148-GS08

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

MMBD914

MMBD914

Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

BZT52C5V1

BZT52C5V1

Planar Die Construction . 350mW Power Dissipation on Ceramic PCB . General Purpose, Medium Current . Ideally Suited for Automated Assembly Processes . Available in Lead Free Version.

SS86

SS86

Metal silicon junction, majority carrier conduction . For surface mounted applications . Low power loss, high efficiency . High forward surge current capability . For use in low voltage, high

Related archived topics

Request a quote