MOSFET G3R160MT17J

The G3R160MT17J is a original 1700V 160Ω N-channel SiCFET semiconductor MOSFET.

Products Description The G3R160MT17J is a original 1700V 160Ω N-channel SiCFET semiconductor MOSFET. Features The G3R160MT17J is a state-of-the-art SiC MOSFET with a maximum voltage rating of 1700 V and a low on-state resistance of 160 mOhm. Its advanced G3RTM technology allows for a +15V gate drive, resulting in excellent switching performance and reduced switching losses. This device boasts a low device capacitance (Coss, CRss) which greatly improves efficiency in high-frequency applications. Additionally, it offers a superior cost-performance index, meaning that it provides outstanding value for its price. The G3R160MT17J includes a robust body diode that features low reverse recovery voltage (Ve) and low reverse recovery charge (QR). This ensures reliability in demanding applications and enables low switching losses. To further optimize the performance of the G3R160MT17J, it has been packaged with a separate driver source pin. This allows for easy integration into various systems and ensures precise and efficient control. 1700 V 160 mQ SiC M0SFET Superior Cost-Performance Index Superior Cost-Performance Index Parameters Packaging method Leakage source voltag Operational temperature TO-263-7 1700 V -55℃ to 175℃ Pin Configuration Hot Tags: mosfet g3r160mt17j, China mosfet g3r160mt17j suppliers, manufacturers, rugged industrial computers, monolithic circuit, semiconductor diode, AD8539ARZ Marking AD8539 SOP8 Precision Op Amp, light emitting diode, pressure temperature sensor