
MMBD914
Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

The PMEG4005AEA is a 40 V 500 mA MEGA Schottky barrier rectifier diode with very low forward voltage and very low VF..

The MC100EPT21 is a Differential LVPECL/LVDS/CML to LVTTL/LVCMOS translator.

The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V.

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

RB021VAM90

Fast Switching Speed. Surface Mount Package Ideally Suited for Automatic Insertion. For General Purpose Switching Applications. High Conductance.

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

Low Leakage. High Conductance.

General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications.

Planar Die Construction . 350mW Power Dissipation on Ceramic PCB . General Purpose, Medium Current . Ideally Suited for Automated Assembly Processes . Available in Lead Free Version.