
1SMA4751A
Complete voltage range 3.3 to 100 volts . High peak reverse power dissipation . High reliability. Low leakage current . Standard zener voltage tolerance is ± 5%. . Pb / RoHS Free.

Complete voltage range 3.3 to 100 volts . High peak reverse power dissipation . High reliability. Low leakage current . Standard zener voltage tolerance is ± 5%. . Pb / RoHS Free.

The STTH310UFY, a 1000 V ultrafast rectifier, is a fast ultrafast power diode with very low conduction losses.

The PMEG4005AEA is a 40 V 500 mA MEGA Schottky barrier rectifier diode with very low forward voltage and very low VF..

The SMAJ5.0A is a fantastic electronic component that offers a plethora of benefits. Firstly, it has a low profile, which makes it easy to install in various devices. Additionally, it features a

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping.Extremely low forward voltage reduces conduction loss. Miniature surface

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

Rating to 1000V PRV . Ideal for printed circuit board . Reliable low cost construction utilizing molded plastic technique . The plastic material has UL flammability classification 94V#0.

Total power dissipation: Max. 500mW.. Wide zener reverse voltage range 2.0V to 75V.. Small plastic package suitable for surface mounted design.. Tolerance approximately±5%.

In MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon

Planar Die Construction . 350mW Power Dissipation on Ceramic PCB . General Purpose, Medium Current . Ideally Suited for Automated Assembly Processes . Available in Lead Free Version.

Planar Die Construction . Ultra-Small Surface Mount Package. General purpose, Medium Current . Ideally Suited for Automated Assembly Processes.

Metal silicon junction, majority carrier conduction . For surface mounted applications . Low power loss, high efficiency . High forward surge current capability . For use in low voltage, high