
MB6S
General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications.

General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications.

The STTH310UFY, a 1000 V ultrafast rectifier, is a fast ultrafast power diode with very low conduction losses.

The PMEG4005AEA is a 40 V 500 mA MEGA Schottky barrier rectifier diode with very low forward voltage and very low VF..

APT60DQ100BG is a ULTRAFAST SOFT RECOVERY RECTIFIER Diode. which the APT60DQ100BG is a fantastic choice for those looking to boost their system's performance while also improving its reliability and

IDW75E60 is a high-quality semiconductor device equipped with advanced 600V EmCon technology to ensure smooth and efficient performance. It features fast recovery to enhance reliability and prevent

General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, switching mode power supply, adapter, audio equipment, and home appliances applications.

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

Rating to 1000V PRV . Ideal for printed circuit board . Reliable low cost construction utilizing molded plastic technique . The plastic material has UL flammability classification 94V#0.

UL recognition, file #E230084 . Suitable for printed circuit board or chassis mounting . Compact construction . High surge current capability . Solder dip 275 °C max. 7 s, per JESD 22-B106.

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 . Good for printed circuit boards . Low reverse leakage . Capability of high forward surge current. High

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 . Ideal for printed circuit boards . Low reverse leakage . High forward surge current capability . High

Metal silicon junction, majority carrier conduction . For surface mounted applications . Low power loss, high efficiency . High forward surge current capability . For use in low voltage, high