
MMBD914
Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

Fast Switching Device (TRR<4.0ns). Power Dissipation of 350mW. High Stability and High Reliability. Low reverse leakage.

The STTH310UFY, a 1000 V ultrafast rectifier, is a fast ultrafast power diode with very low conduction losses.

The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V.

The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping.Extremely low forward voltage reduces conduction loss. Miniature surface

Fast Switching Speed. Surface Mount Package Ideally Suited for Automatic Insertion. For General Purpose Switching Applications. High Conductance.

Silicon epitaxial planar diode. Electrical data identical with the devices 1N4148 and 1N4448 respectively. AEC-Q101 qualified.

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected.

Low Leakage. High Conductance.

Rating to 1000V PRV . Ideal for printed circuit board . Reliable low cost construction utilizing molded plastic technique . The plastic material has UL flammability classification 94V#0.

Complete voltage range 3.3 to 100 volts . High peak reverse power dissipation . High reliability. Low leakage current . Standard zener voltage tolerance is ± 5%. . Pb / RoHS Free.

Guardring for overvoltage protection. Low power loss . Extremely fast switching. High forward surge capability . High frequency operation . Solder dip 260 °C max. 10 s, per JESD 22-B106.