
Key Features
Type: SP6T (Single-Pole Six-Throw) RF Switch
Technology: UltraCMOS® (SOI - Silicon-on-Insulator)
Frequency Range: 10 MHz – 8 GHz
Insertion Loss:
0.65 dB typical @ 1 GHz
1.0 dB typical @ 3 GHz
1.6 dB typical @ 6 GHz
Isolation:
50 dB typical @ 1 GHz
40 dB typical @ 3 GHz
30 dB typical @ 6 GHz
Input Power Handling (P1dB): +33 dBm typical
IIP3 (Linearity): +65 dBm typical
Switching Time: 210 ns typical
Control Interface: 3-bit parallel or serial control logic
Supply Voltage (VDD): 2.3 V to 5.5 V
Control Voltage (VCTRL): 0 to 3.3 V (CMOS/TTL compatible)
Return Loss: 20 dB typical
ESD Protection:
1000 V (Human Body Model)
250 V (Charged Device Model)
Package Type: 24-lead QFN with exposed pad
Package Dimensions: 4 mm × 4 mm × 0.85 mm
Mounting: Surface Mount (SMD)
Operating Temperature Range: –40 °C to +85 °C
RoHS / REACH: Compliant and lead-free
Performance Highlights
Broadband operation from 10 MHz to 8 GHz
Excellent isolation and low insertion loss across band
High linearity and power handling
Fast switching speed suitable for dynamic routing applications
50 Ω system compatible
Compact, thermally efficient QFN package
ESD-protected control interface for robust operation
Applications
RF and microwave communication systems
Filter bank and antenna switching
Test and measurement instrumentation
Wireless infrastructure and base stations
Multi-band transceivers
Automated test equipment (ATE)
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