Electronic components
K4F6E3S4HM-THCL
- Part number
- K4F6E3S4HM-THCL
- Category
- Other Electronic Components
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Overview
The Samsung K4F6E3S4HM-THCL is a 24Gb LPDDR4 SDRAM device designed for high-performance, low-power mobile and embedded applications.
It delivers high bandwidth, improved power efficiency, and reliable operation suitable for next-generation smartphones, AIoT modules, industrial controllers, and automotive electronics.
Details
Key Features
Memory Density: 24Gb (Gigabit)
Organization:
6Gb × 4 dies stacked (typical configuration)
32-bit data width (x32)
Technology: LPDDR4 SDRAM
Voltage:
VDD2: 1.1V (core)
VDDQ: 0.6V (I/O, LPDDR4X-compatible low-power signaling)
Data Rates: Up to 4266 Mbps per pin (speed-bin dependent)
Package: FBGA (Fine-pitch BGA), slim-profile
Low-Power Features:
Deep Sleep Mode (DSM)
Partial Array Self Refresh (PASR)
Adaptive Refresh
High Reliability: Ideal for long-term embedded use
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