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K4F6E3S4HM-THCL

K4F6E3S4HM-THCL

The Samsung K4F6E3S4HM-THCL is a 24Gb LPDDR4 SDRAM device designed for high-performance, low-power mobile and embedded applications. It delivers high bandwidth, improved power efficiency, and reliable operation suitable for next-generation smartphones, AIoT modules, industrial controllers, and automotive electronics.

Description

20251205105225146115

Key Features

Memory Density: 24Gb (Gigabit)

Organization:

6Gb × 4 dies stacked (typical configuration)

32-bit data width (x32)

Technology: LPDDR4 SDRAM

Voltage:

VDD2: 1.1V (core)

VDDQ: 0.6V (I/O, LPDDR4X-compatible low-power signaling)

Data Rates: Up to 4266 Mbps per pin (speed-bin dependent)

Package: FBGA (Fine-pitch BGA), slim-profile

Low-Power Features:

Deep Sleep Mode (DSM)

Partial Array Self Refresh (PASR)

Adaptive Refresh

High Reliability: Ideal for long-term embedded use

 

 

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