Electronic components

M29W160EB70ZA6E

Part number: M29W160EB70ZA6E
Category: Memory / Nand Flash

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Product information

Overview

The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed.

Details

Products Description The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. Features The M29W160EB70ZA6E is a reliable and high-performing 16Mbit 3V flash parallel non-volatile memory that offers faster production and batch programming for a seamless user experience. With temporary block unprotection and low power consumption, this memory is designed to meet the most demanding requirements of multiple applications. Additionally, the M29W160EB70ZA6E offers 100,000 program/erase cycles per block for optimized reliability and durability. This makes it an excellent choice for use in a broad range of scenarios where performance and endurance are paramount. Overall, the M29W160EB70ZA6E delivers an optimal balance of reliability, performance, and power efficiency, making it the perfect choice for various high-tech applications. It is a product that you can trust, and it will undoubtedly exceed your expectations. Faster Production/Batch ProgrammingFaster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION LOW POWER CONSUMPTION Parameters Packaging method Input voltage Operational temperature 48-TFBGA 48-TFBGA -40°C ~ 85°C Application Smart homes or electronic devices etc Dimension Hot Tags: m29w160eb70za6e, China m29w160eb70za6e suppliers, manufacturers