EV2A16AMNYU35

The EV2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits.

Products Description The EV2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. Features The EV2A16AMNYU35, a high-speed, flexible MRAM solution for your memory needs. With its symmetrical read and write capabilities and fast access time, you can be sure that your data is processed quickly and efficiently. The EV2A16AMNYU35 offers flexible data bus control, allowing for either 8 bit or 16 bit access. Plus, equal address and chip-enable access times ensure that data is accessed and processed smoothly. Not only is this solution fast and efficient, but it also offers automatic data protection for added security. And thanks to its fully static operation, you can be sure that the EV2A16AMNYU35 will provide reliable memory performance. In short, the EV2A16AMNYU35 is a top-of-the-line MRAM solution that offers a high-speed, flexible, and reliable memory solution for all of your data storage needs. Automatic Data Protection Fully Static Operation Equal Address and Chip-enable Access Times Parameters Packaging method Input voltage Operational temperature TSOP-2 0.5 to 4.0V -55 ℃ to 125 ℃ Dimension Hot Tags: ev2a16amnyu35, China ev2a16amnyu35 suppliers, manufacturers, EP1C6T144C8N TQFP144 Programmable Logic Device, integrated chip, microcontroller integrated circuit, electromagnetic compatibility of integrated circuits, large scale integration, EPM7032LC44 7 PLCC44 Programmable Logic Device